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| SI6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.034 @ VGS = - 4.5 V 0.050 @ VGS = - 2.5 V 0.075 @ VGS = - 1.8 V ID (A) "4.6 "3.8 "3.0 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 D2 D 8 D2 7 S2 6 S2 5 G2 G1 G2 SI6969DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 "4.6 "3.8 "30 - 1.25 1.1 0.72 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70828 S-59527--Rev. A, 19-Oct-98 www.vishay.com t v 10 sec Steady State RthJA 115 Symbol Typical Maximum 110 Unit _C/W 2-1 SI6969DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS w - 8 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.6 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 3.8 A VGS = - 1.8 V, ID = - 3.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 8 V, ID = - 4.6 A IS = - 1.25 A, VGS = 0 V - 30 0.027 0.037 0.053 18 - 0.68 - 1.1 0.034 0.050 0.075 S V W - 0.45 "100 -1 - 25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.25 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 4.6 A 21 4.5 3.5 25 35 80 40 50 50 60 150 80 100 ns 40 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2-2 Document Number: 70828 S-59527--Rev. A, 19-Oct-98 SI6969DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 5 thru 2,5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 25_C 30 TC = - 55_C Transfer Characteristics 18 2V 18 125_C 12 12 6 1.5 V 6 1V 0 0 2 4 6 8 10 12 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 VGS = 1.8 V r DS(on) - On-Resistance ( W ) 0.08 C - Capacitance (pF) 3200 4000 Capacitance Ciss 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 2400 1600 800 Crss 0 2 4 Coss 0.00 0 6 12 18 24 30 0 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 4.6 A 1.4 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) 3.6 VGS = 4.5 V ID = 4.6 A 1.2 2.7 1.0 1.8 0.8 0.9 0.0 0 3 6 9 12 15 18 21 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70828 S-59527--Rev. A, 19-Oct-98 www.vishay.com 2-3 SI6969DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.08 0.07 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.06 0.05 ID = 4.6 A 0.04 0.03 0.02 0.01 1 0.00 0.2 0.4 0.6 0.8 1..0 1.2 1.4 0.00 0 2 4 6 8 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.5 0.4 0.3 20 0.2 0.1 0.0 - 0.1 - 0.2 - 50 5 Power (W) ID = 250 mA 30 25 Single Pulse Power V GS(th) Variance (V) 15 10 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 2. Per Unit Base = RthJA = 115_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70828 S-59527--Rev. A, 19-Oct-98 |
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